Thermal interface conductance in Si/Ge superlattices by equilibrium molecular dynamics

prb

Y. Chalopin, K. Esfarjani, A. Henry, S. Volz, and G. Chen, Thermal interface conductance in Si/Ge superlattices by equilibrium molecular dynamics, Phys. Rev. B 85, 195302 (2012)

http://journals.aps.org/prb/abstract/10.1103/PhysRevB.85.195302

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ABSTRACT

We provide a derivation allowing the calculation of thermal conductance at interfaces by equilibrium molecular dynamics simulations and illustrate our approach by studying thermal conduction mechanisms in Si/Ge superlattices. Thermal conductance calculations of superlattices with period thicknesses ranging from 0.5 to 60 nm are presented as well as the temperature dependence. Results have been compared to complementary Green-Kubo thermal conductivity calculations demonstrating that thermal conductivity of perfect superlattices can be directly deduced from interfacial conductance in the investigated period range. This confirms the predominant role of interfaces in materials with large phonon mean free paths.

Thermal interface conductance in Si/Ge superlattices by equilibrium molecular dynamics